Ion Implantation-Induced Layer Splitting of Semiconductors
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چکیده
منابع مشابه
Wafer Bonding and Layer Splitting for Microsystems**
In advanced microsystems various types of devices (metal-oxide semiconductor field-effect transistors, bipolar transistors, sensors, actuators, microelectromechanical systems, lasers) may be on the same chip, some of which are 3D structures in nature. Therefore, not only materials combinations (integrated materials) are required for optimal device performance of each type but also process techn...
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Layer transfer of BaTiO3 thin films onto silicon-based substrates has been investigated. Hydrogen and helium ions were co-implanted to facilitate ion-implantation-induced layer transfer of films from BaTiO3 single crystals. From thermodynamic equilibrium calculations, we suggest that the dominant species during cavity nucleation and growth are H2, H +, H2O, Ba 2+ and Ba–OH, and that the additio...
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Under sufficiently high dose and energy, ions implanted into a semiconductor will produce an amorphous layer throughout the range in which nuclear stopping is the dominant mechanism for slowing the ions. In arsenic implanted silicon, for example, this corresponds to doses greater than 1014ions/cm2 and energies above 10 keV. Using a model for thermal and plasma wave-induced modulated reflectance...
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Cross-sectional TEM studies of ion implantation induced amorphization in a large number of semiconductors have been performed. Samples of Si, AlAs, GaAs, GaP, GaSb, InP, InAs, and ZnSe were simultaneously implanted at 77 K with 20 keV Si at doses between 1 x 10/cm and 1 x 10/cm. A dose of 1 x 10/cm minimized the ion beam induced epitaxial crystallization and sputtering effects. The depth of the...
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